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Paper No P34: Optical Properties and Structure of HDPCVD Silicon Dioxide
Author(s) -
Yasunas Aleksandr,
Kovalchyk Natalia,
Komar Olga,
Radzionay Uriy,
Kotov Dmitry,
Shiripov Vladimir
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.44
Subject(s) - materials science , silicon dioxide , passivation , chemical vapor deposition , silicon , refractive index , optoelectronics , deposition (geology) , plasma enhanced chemical vapor deposition , chemical engineering , silicon oxide , oxide , crystalline silicon , nanotechnology , composite material , layer (electronics) , metallurgy , paleontology , silicon nitride , sediment , engineering , biology
Silicon dioxide layers are widely used for imparting the required optical properties to the multilayer displays' coatings, as well as for electrical insulation and passivation of the LEDs active structure. The oxide film being formed should be dense and conformally fill the developed LED structure surface, at the same time there are often limits on the maximum operating temperature of the deposition process. It is possible to ensure the implementation of all these requirements by using the method of chemical vapor deposition (CVD) in high‐density plasma (HDP CVD). This method reveals the advantages of CVD methods over the PVD (physical vapor deposition) methods in the fullest measure. The experimental results on the silicon dioxide films formation on glass and silicon substrates by HDPCVD method are presented in this work. The dependence of the film refractive index and its structural characteristics change on the technical process characteristics are represented here.