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Paper No P35: Improved Stability of Solution‐Processed ZnO Thin‐Film Transistor Post‐Treated by Ultraviolet Annealing Step
Author(s) -
Kang Taesung,
Koo Jayhyun,
Kim Taeyoon,
Hong Jinpyo
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.4
Subject(s) - annealing (glass) , x ray photoelectron spectroscopy , thin film transistor , materials science , ultraviolet , optoelectronics , ultraviolet photoelectron spectroscopy , transistor , analytical chemistry (journal) , thin film , chemical engineering , nanotechnology , chemistry , metallurgy , electrical engineering , voltage , chromatography , layer (electronics) , engineering
We present electrical and structural features of solution‐processed ZnO thin‐film transistors (TFTs) grown via a chemical solution process post‐treated by ultra violet (UV) annealing step at processing temperature below 250°C. The transfer curves for the UV annealed ZnO TFTs, including around two‐order higher on‐current magnitude reveals only a negative drift of −0.66 V in time for 15 days, compared with a −9.29 V negative drift of the conventionally thermally annealed ZnO TFTs at 300°C. The observation of X‐ray photoelectron spectroscopy clearly demonstrates the significant reduction of non‐lattice oxygen vacancies via proper UV annealing step. The nature of improved stability in the UV‐annealed ZnO TFTs is also described.