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Paper No P13: Patterning of OSC Materials for Minimizing of Parasitic Currents
Author(s) -
Coombs Benjamin A.,
McCall Keri L.,
Rutter Simon R.,
Ogier Simon D.
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.34
Subject(s) - photoresist , thin film transistor , organic semiconductor , materials science , optoelectronics , dielectric , transistor , semiconductor , nanotechnology , electrical engineering , engineering , voltage , layer (electronics)
In this paper, we describe a versatile method for the patterning of dielectric and organic semiconductor (OSC) in an organic thin‐film transistor (OTFT) that we have developed using commercially available material sets. OTFTs with on/off ratios of 10 9 and mobilities > 4 cm 2 /Vs can be produced using CPI's FlexOS TM OSC and Orthogonal Inc. OSCoR1510 photoresist.