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P‐16.12: Development of High Performance In‐cell Touch Panel based on Oxide TFT
Author(s) -
Huang Lei,
Wen Chaoping,
Xu Yang
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15387
Subject(s) - thin film transistor , power consumption , oxide , materials science , electricity , power–delay product , optoelectronics , leakage (economics) , electrical engineering , computer science , power (physics) , electronic engineering , transistor , engineering , voltage , nanotechnology , physics , layer (electronics) , quantum mechanics , economics , metallurgy , macroeconomics
In‐cell touch panel based on oxide TFT possesses excellent display performance, high SNR and supports LPWG function with lowest power consumption. However, due to the discrete electrode VCOM and low leakage current characteristics of oxide TFT, it is easy to cause static electricity and charge residual. In view of above problems, this paper fully introduces the product design and process of targeted optimization.