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P‐13.9: Study of AMOLED Vertical‐Crosstalk mechanism and improvement
Author(s) -
Liu Tingliang,
Yang Huijuan,
Zhang Yi,
Long Yue,
Xu YuanJie,
Hu Ming,
Youngyik Ko
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15366
Subject(s) - capacitance , oled , crosstalk , parasitic capacitance , amoled , pixel , materials science , thin film transistor , optoelectronics , electrode , electrical engineering , electronic engineering , active matrix , optics , physics , engineering , nanotechnology , layer (electronics) , quantum mechanics
The Simulation Model of Back Plane Circuit Vertical Crosstalk (BP‐VC) of AM‐OLED displays was established according to the experimental VC test method in this paper. The impact of the Pixel Storage capacitance (C st ) and the Parasitic Capacitance had been studied. Pixel with good simulated VC had been optimized by increasing C st and decreasing the parasitic capacitance of gate electrode of driving TFT (N1 node) and Gate line (Cap2), thus reaching the achievement that BP‐VC decreases from 1.54% to 0.76% in 6.5 inch FHD OLED Display.