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P‐13.8: Evaluation of the Structure‐Capacitance Relationship in OLED Device and the Influence of Capacitance Variation on Pixel Circuit
Author(s) -
Zhang Yupei,
Chen Long,
Wu Yizhou,
Zhang Yuting,
Lee Bong-Geum,
Yu Xiaojun
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15365
Subject(s) - amoled , oled , capacitance , compensation (psychology) , materials science , electronic circuit , active matrix , optoelectronics , diode , thin film transistor , electrical engineering , electronic engineering , computer science , engineering , physics , nanotechnology , layer (electronics) , psychology , electrode , quantum mechanics , psychoanalysis
Over the past years, active‐matrix organic light‐emitting diode (AMOLED) has established a commanding position in displays for smart phones, smart watches and TVs. However, AMOLED display still faces challenges in pursuing high‐level performance as TFT and/or OLED suffer device‐level variation and dynamic shifting resulting from the aging effect. Thus, a variety of internal compensation circuits, which are designed to partially compensate these harmful variation and dynamic shifting, have been implemented into pixel circuits of AMOLED products. Previous studies have mainly focused on the instability of TFT device, however the capacitance of OLED device could also affect the overall compensation effect. In this study, the structure‐capacitance relationship of OLED device is systematically presented and the influence of capacitance variation on the pixel circuits at compensation stage is also discussed.