z-logo
Premium
P‐1.7: Atomic‐Layer‐Deposition Deposited Superlattice‐Structure Al‐Zn‐O Films for Thin Film Transistors Application
Author(s) -
Wang Jingyi,
Dong Junchen,
Li Qi,
Xu Dengqin,
Wang Yi,
Han Dedong
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15255
Subject(s) - superlattice , materials science , thin film transistor , optoelectronics , layer (electronics) , thin film , subthreshold swing , transistor , atomic layer deposition , swing , semiconductor , deposition (geology) , active layer , field effect transistor , voltage , nanotechnology , electrical engineering , paleontology , physics , engineering , sediment , acoustics , biology
Thin film transistors (TFTs) with a superlattice‐structure Al‐Zn‐O (AZO) active layer are demonstrated. The AZO TFTs show excellent device performance and bias stress stability. The major electrical properties include a field‐effect mobility (µ fe ) of 2.35 cm 2 V −1 s −1 , a subthreshold swing (SS) of 141.2 mV/decade, and an on‐to‐off state current ratio (I on /I off ) of 4.29 × 10 6 . Our work accelerates the practical application of superlattice‐structure semiconductor materials in electronic devices.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here