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P‐1.7: Atomic‐Layer‐Deposition Deposited Superlattice‐Structure Al‐Zn‐O Films for Thin Film Transistors Application
Author(s) -
Wang Jingyi,
Dong Junchen,
Li Qi,
Xu Dengqin,
Wang Yi,
Han Dedong
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15255
Subject(s) - superlattice , materials science , thin film transistor , optoelectronics , layer (electronics) , thin film , subthreshold swing , transistor , atomic layer deposition , swing , semiconductor , deposition (geology) , active layer , field effect transistor , voltage , nanotechnology , electrical engineering , paleontology , physics , engineering , sediment , acoustics , biology
Thin film transistors (TFTs) with a superlattice‐structure Al‐Zn‐O (AZO) active layer are demonstrated. The AZO TFTs show excellent device performance and bias stress stability. The major electrical properties include a field‐effect mobility (µ fe ) of 2.35 cm 2 V −1 s −1 , a subthreshold swing (SS) of 141.2 mV/decade, and an on‐to‐off state current ratio (I on /I off ) of 4.29 × 10 6 . Our work accelerates the practical application of superlattice‐structure semiconductor materials in electronic devices.