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P‐1.2: All‐Oxide Thin‐Film Transistors for Low‐Voltage‐Operation Circuits
Author(s) -
Deng Sunbin,
Chen Rongsheng,
Xu Yuming,
Zhong Wei,
Dong Shou-Cheng,
Li Guijun,
Zhang Meng,
Yeung Fion Sze Yan,
Wong Man,
Kwok Hoi-Sing
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15250
Subject(s) - thin film transistor , materials science , transistor , optoelectronics , ohmic contact , electrical engineering , electronic circuit , voltage , threshold voltage , electronics , indium tin oxide , thin film , nanotechnology , engineering , layer (electronics)
This work reports fully transparent all‐oxide thin‐film transistors (TFTs) and circuits with high electrical performance under a one‐volt operation. By configuring a high oxygen partial pressure ratio in the deposition of indium‐tin oxide (ITO) source/drain (S/D) pads, non‐ohmic S/D contacts were formed to regulate a noise‐level off‐state current and a nearly‐zero turn‐on voltage for the devices. Depending on different post‐annealing time, the one‐volt operation was realized in both normally‐on and normally‐off TFTs. Among various unipolar‐TFT‐based inverters, the one composed of the normally‐off devices exhibited a record small power‐delay product of ∼0.35 pJ. These results are applicable to the development of energy‐efficient wearable electronics.