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36.1: Invited Paper: High Performance PrIZO Oxide TFTs and the Target Fabrication
Author(s) -
Xu Hua,
Xu Miao,
Wang Lei,
Peng Junbiao
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15162
Subject(s) - thin film transistor , materials science , optoelectronics , amoled , doping , fabrication , field effect , transistor , layer (electronics) , praseodymium , active layer , nanotechnology , electrical engineering , voltage , metallurgy , active matrix , medicine , alternative medicine , engineering , pathology
Praseodymium‐doped indium zinc oxide (PrIZO) has been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibit a remarkable suppression of the light induced instability. A negligible photo‐response and remarkable enhancement in negative gate bias stress under illumination (NIBS) are achieved in the PrIZO TFTs. Meanwhile, the PrIZO TFTs show reasonable characteristics with a high field effect mobility of 26.3 cm 2 /Vs, SS value of 0.28V/decade, and I on /I off ratio of 10 9 . A prototype of fully transparent AMOLED display is successfully fabricated to demonstrate the potential of Pr‐doping TFTs applied in transparent devices. The G4.5 target of PrIZO has been fabricated for the future mass production.