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34.1: Invited Paper: Availability of a‐IGZO semiconductor TFT in the large size Gen. 11 facilities for competitive high‐end applications
Author(s) -
Seo Hyun-Sik,
Sun Qianhui,
Wu Wei,
Hsu Yuan-Jun,
Li Shan,
Cao Weiran,
Xiao Jun Cheng,
Wu Yuan-Chun,
Zhao Bin,
Zhang Xin,
Yan Xiaolin
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15157
Subject(s) - thin film transistor , materials science , optoelectronics , oxide thin film transistor , transistor , amorphous solid , electrical engineering , nanotechnology , engineering , voltage , crystallography , chemistry , layer (electronics)
We investigated the four‐phase amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in the world largest generation 11 factory (Gen.11, 2940mm × 3370mm) which has the cost advantage for future high‐end applications compared to generation 8.5 (Gen. 8.5, 2200mm × 2500mm). Self‐aligned coplanar structure TFT has been developed for large size inkjet printing (IJP) OLED display, and 4 mask back channel etched (BCE) type TFT has been developed for large size 8K4K LCD applications. For the purpose of low cost, high‐end applications, the availability of large size oxide TFT is essential in Gen. 11.