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32.4: Abnormal Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin Film Transistor under Extremely High Intensity Illumination
Author(s) -
liu Chunming,
Jiang Zhixiong,
Xu Hongyuan,
Zhang Jiping,
Son Woosung
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15150
Subject(s) - thin film transistor , materials science , optoelectronics , threshold voltage , reliability (semiconductor) , transistor , intensity (physics) , layer (electronics) , voltage , electrical engineering , optics , nanotechnology , engineering , physics , power (physics) , quantum mechanics
The abnormal threshold voltage (Vth) turnaround behavior of a‐Si:H TFTs was investigated when biased under extremely high intensity illumination. TFTs with various compositions of gate insulator (SiNx) interface layer were fabricated to avoid this abnormal behavior and enhance reliability upon high intensity illumination. 500‐hours RA results confirmed that our optimization strategy can effectively improve the reliability of TFT‐LCDs.