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31.2: Invited Paper: High Efficiency Red and Green InP‐Quantum Dot Light‐Emitting Diodes
Author(s) -
Lampande Raju,
Jeong Kim Su,
Kwon Jang Hyuk
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15144
Subject(s) - indium phosphide , quantum dot , optoelectronics , light emitting diode , diode , quantum efficiency , materials science , indium , electron mobility , green light , layer (electronics) , blue light , gallium arsenide , nanotechnology
We demonstrate high‐efficiency red and green indium phosphide (InP) quantum dot light‐emitting diodes (QLEDs) comprising low mobility electron transport layer and high mobility hole transport layer with deep HOMO level. Red and green InP‐QLEDs show maximum external quantum efficiency of 21.8% and 13.5%, respectively, and high device stability.