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29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display
Author(s) -
Uraoka Yukiharu,
Takahashi Takanori,
Fujii Mami,
Bermundo J.P.,
Miyanaga Ryoko,
Uenuma Mutsunori
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15134
Subject(s) - thin film transistor , electric field , materials science , degradation (telecommunications) , optoelectronics , transistor , stress (linguistics) , oxide , thin film , mechanism (biology) , electrical engineering , gate oxide , engineering physics , composite material , nanotechnology , engineering , metallurgy , layer (electronics) , voltage , physics , linguistics , philosophy , quantum mechanics
AC stress was applied to the IWZO thin film transistor with high mobility, and its deterioration phenomenon was observed. As a result, a rare phenomenon in which the ON current deteriorates was observed. A deterioration model was proposed by reference experiments using DC stress, emission analysis using an emission microscope, and electric field distribution analysis using a device simulator. It was concluded that the deterioration is due to hot carriers that occur when the gate electric field changes from ON to OFF.