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15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs
Author(s) -
Cho Min Hoe,
Seul Hyeon Joo,
Jeong Jae Kyeong
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15067
Subject(s) - materials science , optoelectronics , thin film transistor , amoled , active matrix , electron mobility , amorphous solid , dielectric , transistor , diode , heterojunction , layer (electronics) , voltage , nanotechnology , electrical engineering , chemistry , organic chemistry , engineering
The amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistors (TFTs) have become the standard backplane technology for large‐area active‐matrix organic light‐emitting diode (AMOLED) TV. The high‐end mobile OLED demands the high mobility of ∼100 cm 2 /Vs. So far, the various approaches to improve the mobility of electron carriers in IGZO TFTs have been researched, including the optimization of cation composition, stacked channel structure, and the lattice ordering‐induced crystallization. In this paper, we presented our recent efforts toward the high‐performance and good reliability for IGZO TFTs, which is based on the atomic layer deposition process. First, the merits of the ALD‐derived IGZO compared to sputtered IGZO in terms of the electrical performance of IGZO TFT were investigated. Second, the quantum confinement effect in the IGZO heterojunction channel stacks was exploited, leading to 2DEG‐like high mobility. Finally, the IGZO TFTs with the high‐mobility and low‐driving‐voltage was realized through the bilayer IGZO channel and HfO 2 ‐based gate dielectric stack.