Premium
8.3: Invited Paper: GTO‐TFT deposited using Mist‐CVD
Author(s) -
Kimura Mutsumi,
Takishita Yuta,
Okamoto Ryugo,
Matsuda Tokiyoshi
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15044
Subject(s) - mist , thin film transistor , materials science , transistor , optoelectronics , economic shortage , deposition (geology) , chemical vapor deposition , nanotechnology , electrical engineering , engineering , layer (electronics) , voltage , physics , paleontology , linguistics , philosophy , sediment , government (linguistics) , meteorology , biology
A GTO‐TFT deposited using the mist‐CVD has been developed. The authors are focusing on GTO devices because they do not include rare metals such as In, and industrial issues on supply shortage and resource depletion can be resolved. One the other hand, a mist‐CVD is one of the deposition methods without vacuum environment also for AOS devices, and it is expected that they can be manufactured at an extremely low cost. In this paper, the GTO film is actually deposited using the mist‐CVD, and the GTO TFT is also actually fabricated. The XRD pattern and SEM image show that the GTO film is sometimes crystallized. The optical absorption shows that the bandgap is 3.7 eV. The transistor characteristic shows that a transistor behavior is surely achieved.