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2.4: Integrated Gate Driver Circuit Technology with IGZO TFT for AMOLED Displays of Simultaneous Emission Driving Method
Author(s) -
Yuan Can,
Li Yongqian,
Feng Xuehuan,
Yuan Zhidong
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.15019
Subject(s) - amoled , thin film transistor , gate driver , waveform , materials science , driver circuit , oled , electronic engineering , logic gate , optoelectronics , computer science , electrical engineering , voltage , engineering , nanotechnology , active matrix , layer (electronics)
In this paper, we propose a new integrated gate driver circuit for a simultaneous emission (SE) driving method using IGZO TFT. Simulation results indicate that the proposed gate driver prevents the output waveforms the effect of positive and negative biases, and VTH variations of IGZO TFTs. Furthermore, the proposed circuit is suitable for AMOLED displays with the SE driving method.