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P‐114: Performance Improvement of Top‐Emitting Blue Quantum Dot Light‐Emitting Diodes by an Organic Capping Layer
Author(s) -
Feng Jingwen,
Li Dong,
Lu Zhigao,
Chen Zhuo,
Li Yanzhao,
Li Xinguo,
Zhou Li,
Pei Chen,
Xu Xiaoguang
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14943
Subject(s) - gamut , optoelectronics , light emitting diode , quantum dot , diode , materials science , layer (electronics) , cathode , oled , active matrix , active layer , nanotechnology , optics , electrical engineering , physics , engineering , thin film transistor
Quantum Dot Light Emitting diodes (QLED) show promise in the development of next‐generation displays due to their unique properties, such as cost‐effective, large‐area, wide‐color‐gamut and long life‐time. However, the most studied bottom‐emitting device structure can't meet the requirements of high resolution and high information‐content active matrix (AM) display in the future. Here, top‐emitting blue QLEDs with capping layer (CPL) on top metal cathode were fabricated and characterized. The introduction of CPL can influence both the optical and electrical properties of the device, resulting in a remarkable current efficiency improvement. By optimizing the CPL thickness, we have achieved an almost 12‐fold efficiency improvement of top‐emitting blue QLEDs.