Premium
P‐63: Electro‐optical properties investigation in AlGalnP‐based Red Micro‐LED devices
Author(s) -
Feng Yang,
Zhanghu Mengyuan,
Lin Yonghong,
Liu Zhaojun
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14940
Subject(s) - optoelectronics , materials science , light emitting diode , diode , quantum tunnelling , current (fluid) , voltage , electrical engineering , engineering
AlGalnP‐based light‐emitting diode (LED) arrays are a promising technology in a wide range of applications. The electrical characteristics and current transport properties of AlGaInP‐based red micro‐light‐emitting diodes were investigated using current‐voltage (I‐V) measurements. The ideality factor of device was obtained, indicating that the current conduction mechanism is defect‐assisted tunneling, which forms parasitic current paths across the active region. These results were consistent with the parasitic resistances obtained from the measured current‐voltage curves. It was attributed that the defects originated from sidewall damage of the active layer. The EL spectrum of the red micro‐LED is characterized by narrow emission width of ~19 nm