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P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor
Author(s) -
Wang Sisi,
Lu Lei,
Lv Nannan,
Wong Man
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14890
Subject(s) - thin film transistor , materials science , oxidizing agent , optoelectronics , gallium , indium , threshold voltage , amorphous solid , transistor , annealing (glass) , oxide , voltage , electrical engineering , metallurgy , nanotechnology , chemistry , crystallography , layer (electronics) , organic chemistry , engineering
Different processes have been investigated for the fluorination of amorphous indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) and the reliability of the resulting TFTs subjected to a positive gate‐bias thermal stress has been compared. It is shown that the negative shift of the turn‐on voltage of a TFT improved with an increase in the fluorination time. Such improvement correlates well with the annihilation of oxygen‐related defects in the fluorinated channels. However, further extension of the fluorination time has been found to lead to degradation of some device characteristics. An alternative process has been proposed, involving the addition of a non‐oxidizing anneal before the fluorination treatment. More positive shift of the turn‐on voltage and improvement in reliability have been obtained, without the TFT suffering from degradation in other device characteristics.