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P‐17: Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability
Author(s) -
Fu Jia,
An Junjun,
Liao Congwei,
Liang Jian,
Dai Chao,
Zhang Xin,
Zhang Shengdong
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14889
Subject(s) - amoled , thin film transistor , materials science , oled , pixel , optoelectronics , capacitor , active matrix , transistor , threshold voltage , reliability (semiconductor) , spice , compensation (psychology) , diode , voltage , electronic engineering , electrical engineering , computer science , engineering , artificial intelligence , physics , power (physics) , composite material , psychology , quantum mechanics , psychoanalysis , layer (electronics)
In this paper, pixel circuit design method using low‐temperature poly‐silicon and oxides (LTPO) thin film transistors (TFTs) for active‐matrix organic light‐emitting diode (AMOLED) are derived in detail. Through calculation and SPICE simulation of a typical 7TFT‐1C LTPO pixel circuit, the optimum value for the capacitor is selected as 0.1 pF for accurate V TH compensation and high resolution above 490 pixels per inch (PPI). Moreover, to reduce the relative current error rate to 3 %, the maximum allowable threshold voltage shift is limited within −0.98 V and 0.44 V for IGZO TFT, and within −0.3 V to 0.31 V for the driving TFT (LTPS). This research provides guidelines for AMOLED display development using LTPO TFTs.