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P‐11: Self‐Heating Induced Degradation in a Metal‐Oxide Thin‐Film Transistor on a Flexible Substrate and Its Mitigation
Author(s) -
Xia Zhihe,
Shi Runxiao,
Lu Lei,
Kwok Hoi-Sing,
Wong Man
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14883
Subject(s) - thin film transistor , materials science , substrate (aquarium) , transistor , oxide , optoelectronics , degradation (telecommunications) , polyimide , metal , channel (broadcasting) , thermal , composite material , electrical engineering , layer (electronics) , metallurgy , engineering , voltage , oceanography , physics , meteorology , geology
Self‐heating effects (SHE) in a metal‐oxide thin‐film transistor (TFT) built on a polyimide substrate are characterized and their correlation to the effects on the TFT subjected to positive‐bias thermal stress is verified. Techniques of mitigating SHE are proposed, including breaking up a wide channel into parallel tracks of narrower channels or fluorination of the channel.