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P‐4: Novel Oxide Semiconductors Enabling as High On‐State Current as LTPS
Author(s) -
Obonai Toshimitsu,
Shima Yukinori,
Ohno Masakatsu,
Jintyou Masami,
Okazaki Kenichi,
Yamazaki Shunpei
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14877
Subject(s) - reliability (semiconductor) , semiconductor , materials science , oxide , current (fluid) , optoelectronics , semiconductor device , engineering physics , nanotechnology , electrical engineering , physics , thermodynamics , engineering , metallurgy , power (physics) , layer (electronics)
In this study, two novel oxide semiconductors with high mobilities (OS1 and OS2) were developed. OS1 enables high reliability and a small variation in the characteristics. OS2 also allows high reliability and its mobility is large enough to achieve an on‐state current comparable to that obtained using low‐temperature polysilicon.