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56‐1: Enhancing Response Time of Quantum‐Dot‐Based TFT Photosensor with Self‐Assembled Monolayer
Author(s) -
Jeon Gilsu,
Seo Taewon,
Ko Hyungmin,
Park Hyuk,
Kwon Jisu,
Ha Taeyong,
Kim Sungjee,
Chung Yoonyoung
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14798
Subject(s) - quantum dot , photocurrent , monolayer , optoelectronics , photodiode , photodetector , materials science , response time , rise time , photoconductivity , nanotechnology , physics , computer science , voltage , computer graphics (images) , quantum mechanics
Quantum‐dot‐based a‐IGZO phototransistor has become one of the promising devices for image sensor application due to its bandgap tunability and solution‐process compatibility. However, the QD phototransistor with a‐IGZO, which contains a large amount of charge traps on the surface, exhibited slow photoresponse (τ decay >10 s). In this work, the photocurrent and decay time were significantly enhanced by 2.2 times and 73%, respectively, by introducing a self‐assembled monolayer (SAM), which effectively passivates the traps at the QD/a‐IGZO interface.