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9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length
Author(s) -
Hosaka Yasuharu,
Nakazawa Yasutaka,
Shiraishi Takashi,
Sato Rai,
Okazaki Kenichi,
Yamazaki Shunpei
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14621
Subject(s) - fabrication , materials science , semiconductor , optoelectronics , oxide , channel (broadcasting) , semiconductor device fabrication , nanotechnology , semiconductor device , electrical engineering , metallurgy , wafer , engineering , layer (electronics) , medicine , alternative medicine , pathology
This work presents oxide‐semiconductor FETs with submicron channel length (L) below the resolution limit of the exposure system used in their fabrication on glass substrates. The improved patterning method proposed here enables FET fabrication with L = 0.7 μm and small variation in the characteristics, leading to high on‐state current.