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8‐5: Invited Paper: P‐Type Oxide Semiconductors for Displays: Material Design and Field‐Effect Devices
Author(s) -
Shi Jueli,
Yang Zhenni,
Zhang Kelvin Hongliang
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14618
Subject(s) - thin film transistor , materials science , optoelectronics , amorphous semiconductors , field effect , oxide , amorphous solid , semiconductor , oxide thin film transistor , engineering physics , nanotechnology , field effect transistor , thin film , transistor , electrical engineering , engineering , metallurgy , chemistry , crystallography , voltage , layer (electronics)
Oxide thin film transistors (TFTs) represented by n‐type amorphous InGaZnO x (a‐IGZO) have revolutionized the display industry. However, the lack of p‐type counterparts hinders the development of high‐resolution displays with lower energy consumption. In this paper, we review the recent trend in the material design and devices of p‐type oxide semiconductors.