Premium
8‐4: Invited Paper: Transparent Zn Doped‐CuI for High‐Performance p‐Channel Thin Film Transistors
Author(s) -
Liu Ao,
Zhu Huihui,
Noh Yong-Young
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14617
Subject(s) - transistor , materials science , cmos , optoelectronics , electronic circuit , doping , thin film transistor , inverter , semiconductor , electrical engineering , electronic engineering , nanotechnology , layer (electronics) , engineering , voltage
Over the past decades, developing high‐performance transparent p‐type semiconductors has become one of the urgent tasks in electronic industry for the integration of complementary circuits and high‐end displays. Unfortunately, there is no satisfied candidate reported to date. In this work, we reported a novel transparent p‐type Zn‐doped CuI semiconductor using low‐temperature and low‐cost solution process for high‐performance transistors and circuits. The optimized transistors exhibited a high hole mobility of 5 cm 2 V −1 s −1 and high on/off current ratio of ~10 7 with excellent operational stability and reproducibility. The integrated CMOS inverter delivered a high peak gain of ~60 with the low power consumption. This study paves the way for realizing transparent, flexible, and large‐area integrated circuits with n‐type metal‐oxide semiconductors.