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8‐3: Invited Paper: Back‐Channel Defect Termination for p‐Channel Oxide‐TFTs
Author(s) -
Nomura Kenji
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14616
Subject(s) - thin film transistor , channel (broadcasting) , oxide , oxide thin film transistor , optoelectronics , materials science , electrical engineering , nanotechnology , engineering , layer (electronics) , metallurgy
Oxide semiconductor‐TFT technology is widely accepted as a technology that realizes next‐generation display and flexible device technologies. However, the absence of high‐performance p‐channel oxide‐TFT is still recognized as the largest technological barrier that hinders the potentials of the oxide‐TFT device application. Here we investigated the TFT characteristics of p‐channel SnO and Cu2O oxide‐TFTs and clarified the origin of the poor TFT characteristics. It was found that their TFT performances for both the devices are largely affected backchannel donor‐type defect. We also developed effective backchannel defect termination for p‐channel oxide‐TFTs to improve their p‐channel TFT characteristics.