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7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization
Author(s) -
Furuta Mamoru,
Shimpo Kenta,
Kataoka Taiki,
Tanaka Daiki,
Matsumura Toshihiro,
Magari Yusaku,
Velichko Rostislav,
Sasaki Daichi,
Kawashima Emi,
Tsuruma Yuki
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14612
Subject(s) - thin film transistor , materials science , crystallization , crystallite , amorphous solid , sputter deposition , doping , optoelectronics , thin film , phase (matter) , polycrystalline silicon , chemical engineering , analytical chemistry (journal) , sputtering , nanotechnology , crystallography , metallurgy , layer (electronics) , chemistry , organic chemistry , engineering
Hydrogenated polycrystalline In‐Ga‐O (IGO:H) thin‐film transistor (TFT) was demonstrated by low‐temperature solid phase crystallization (SPC). The amorphous IGO:H was deposited by H 2 doping during RF magnetron sputtering in Ar and O 2 atmosphere. An intentionally doped H 2 in IGO:H film suppressed the crystallization during the film deposition. The amorphous IGO:H film could be converted into the poly‐IGO:H film by SPC below 250 °C. A maximum field effect mobility of 50.6 cm 2 /Vs was obtained from the SPC poly‐IGO:H TFT. The polycrystalline oxide semiconductors (OSs) are simple and cost‐effective approach to achieve high‐performance OS TFTs for future displays.