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7‐3: Invited Paper: High Mobility Self‐Aligned Coplanar Thin‐Film Transistors with a Novel Dual Channel Oxide Semiconductor Architecture
Author(s) -
Kim Jung Bae,
Yim Dong Kil,
Choi Soo Young,
Severin Daniel,
Liu Jian,
Hanika Markus,
Bender Marcus,
Billah Mohammad Masum,
Siddik Abu Bakar,
Jang Jin
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14611
Subject(s) - thin film transistor , materials science , optoelectronics , transistor , electron mobility , semiconductor , threshold voltage , oxide , channel (broadcasting) , electrical engineering , voltage , nanotechnology , layer (electronics) , engineering , metallurgy
Self‐aligned coplanar thin‐film transistors (TFTs) with a novel dual channel architecture comprising of low mobility and high mobility oxide semiconductors show high field‐effect mobility of > 50 cm 2 /Vs with positive threshold voltage of > 0 V and low off‐leakage current of < 1 pA. The TFTs with dual channel allow higher mobility than TFTs with a single high mobility channel because the TFTs with dual channel allow strong electron accumulation due to high electron densities both at the interface between gate insulator and 1st oxide semiconductor and at the hetero‐junction interface between 1st and 2nd oxide semiconductors.