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4‐2: Invited Paper: High Performance Top Gate Oxide TFT Technology for Large Area Flexible AMOLED Display
Author(s) -
Cao Weiran,
Hsu Yuan-Jun,
Jiang Zheng,
Liu Fangmei,
Wu Yuan-Chun,
Zhang Xin
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14600
Subject(s) - thin film transistor , materials science , amoled , optoelectronics , oled , lift (data mining) , bend radius , electrode , bending , electrical engineering , active matrix , computer science , nanotechnology , composite material , engineering , chemistry , layer (electronics) , data mining
We have fabricated PI‐based IGZO TFTs with Cu electrode which exhibit excellent electrical properties and high mechanical reliabilities to meet the demand for large area flexible display. The IGZO TFTs show +0.26 V and −0.34 V of ΔVth under positive bias temperature stress and negative bias temperature illumination stress for 10 hours, respectively, and the Vth shift after laser lift‐off and bending test of 200,000 times are less than 0.08 V and 0.03 V, respectively. Finally, we successfully realize 16.9‐inch rollable OLED display with high performance top gate IGZO TFT, which can be rolled up to a radius of 20 mm.