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4‐1: Invited Paper: Highly Robust Flexible IGZO TFTs and Integrated Circuits
Author(s) -
Kim Kyung-Tae,
Kang Seung-Han,
Cho Sung-Soo,
Park Hun-Bum,
Jo Jeong-Wan,
Park Sung Kyu
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14599
Subject(s) - bend radius , materials science , flexible electronics , optoelectronics , substrate (aquarium) , flexible display , electronics , electronic circuit , amorphous solid , amplifier , radius , bending , thin film transistor , electronic engineering , electrical engineering , nanotechnology , cmos , computer science , layer (electronics) , engineering , composite material , chemistry , crystallography , oceanography , computer security , geology
We investigated amorphous metal‐oxide semiconductor based electronics for flexible and stretchable applications. In particular, we demonstrated a‐IGZO and SWCNT hybrid flexible amplifiers on PI substrate. Also, mesa structured a‐IGZO TFTs showed stable electrical operation under 125 μm bending radius up to 10000 cycles, enabling ultra‐flexible 7‐stage ring oscillator circuit.