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1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications
Author(s) -
Seo Hyun-Sik,
Wu Weihua,
Li GongTan,
Xiao Jun Cheng,
Wu Yuan-Chun,
Zhao Bin,
ZHANG Xin,
Yan Xiaolin
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14592
Subject(s) - thin film transistor , optoelectronics , materials science , amoled , oled , channel (broadcasting) , semiconductor , layer (electronics) , electrical engineering , nanotechnology , engineering , active matrix
Self‐aligned coplanar structure and back channel etched (BCE) structure have been developed using InGaSnO (IGTO) active layer. The mobility of IGTO TFT is around 25 cm 2 V −1 s −1 for both TFT structures. The 31 inch 4K2K (144ppi) top emission IJP AMOLED driven by self‐aligned coplanar IGTO TFTs and 10.7 inch 120 × 120 (× RGB) mini‐LED display driven by BCE IGTO TFTs are fabricated to verify IGTO TFT's characteristics. High mobility IGTO TFTs have been developed for future applications such as high resolution and narrow bezel OLED displays and micro‐LED displays.