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P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric
Author(s) -
Wang Ziwen,
Hu Yonggao,
Lin Qingping,
Li Lei,
Chang Kuan-Chang
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14515
Subject(s) - thin film transistor , materials science , optoelectronics , threshold voltage , dielectric , gate dielectric , transistor , swing , high κ dielectric , layer (electronics) , voltage , active layer , electrical engineering , nanotechnology , engineering , mechanical engineering
a‐IGZO TFT devices are receiving great attention, not only the new display applications require higher mobility, but still need to overcome shortcomings such as high threshold voltage and high sub‐threshold swing. In this work, a double‐layer gate dielectric (Ta 2 O 5 /SiO 2 ) a‐IGZO TFT device is proposed and compared with a single‐layer gate dielectric (SiO 2 ) device. The results appeal that the mobility is effectively improved, the sub‐threshold swing is reduced, the On‐Off current ratio is increased, and the operating voltage is small. Comparisons of single‐layer and double‐layer gate dielectric structures are discussed through energy bandgap analysis. COMSOL simulations and analysis of the electric field and potential distributions of the devices are carried out to explain the reason for the performance improvement in principle.