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P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C
Author(s) -
Dong Junchen,
Li Qi,
Han Dedong,
Wang Yi,
Zhang Xing
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14512
Subject(s) - thin film transistor , materials science , fabrication , substrate (aquarium) , hysteresis , optoelectronics , transistor , process (computing) , nanotechnology , electrical engineering , layer (electronics) , computer science , voltage , condensed matter physics , engineering , medicine , oceanography , alternative medicine , physics , pathology , geology , operating system
Herein, ZnO thin film transistors (TFTs) are fabricated on a flexible substrate with process temperature no more than 100 □. It is notable that the ZnO TFTs show preferable hysteresis and ouput characteristics with a field effect mobility (μ FE ) of 18 cm 2 V −1 s −1 and an on‐to‐off curr ent ratio (I on /I off ) over 10 6 . Our findings provide a novel route for fabrication of high‐performance flexible oxide TFTs.