P‐1.1: Characterization of the Off‐State Current of an Elevated‐Metal Metal‐Oxide Thin‐Film Transistor | Zendy

Wang Yuqi | Zendy; Xia Zhihe | Zendy; Wong Man | Zendy

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P‐1.1: Characterization of the Off‐State Current of an Elevated‐Metal Metal‐Oxide Thin‐Film Transistor

Author(s) -

Wang Yuqi,

Xia Zhihe,

Wong Man

Publication year - 2021

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.14505

Subject(s) - thin film transistor , materials science , transistor , oxide , optoelectronics , metal , electrode , indium , oxide thin film transistor , offset (computer science) , electrical engineering , nanotechnology , metallurgy , voltage , chemistry , computer science , layer (electronics) , engineering , programming language

Without employing an unconventional thin‐film transistor (TFT) with excessively wide effective channel width and offset source/drain electrodes, an improved methodology and circuit are applied to measuring the off‐state current ( I off ) of elevated‐metal metal‐oxide (EMMO) TFTs built on indium‐gallium‐zinc oxide, with or without fluorination. I off of around mid‐10 −18 A/μm has been obtained, with the value slightly lower for an EMMO TFT with a fluorinated channel.

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