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37.3: Suppressing the Trap‐assisted Recombination for High Performance InP/ZnS Green Quantum‐dot Light‐emitting Diodes
Author(s) -
Wu Zhenghui,
Zhang Wenda,
Liu Pai,
Wang Kai,
Sun Xiao Wei
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14450
Subject(s) - quantum dot , optoelectronics , diode , materials science , light emitting diode , exciton , trap (plumbing) , quantum efficiency , quenching (fluorescence) , physics , optics , fluorescence , condensed matter physics , meteorology
The performance of InP/ZnS quantum dot light‐emitting diodes are seriously limited by the large amount of surface traps on InP/ZnS quantum dots and the efficient exciton quenching at the interface between quantum dots and ZnO transport layer. This work provided physical understanding on these problems and approaches to address them. As a result, high efficiency InP/ZnS quantum dot light‐emitting diodes were fabricated.