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36.1: Invited Paper: Comparison in the Performance of Passive and Active TFT Pixel Sensing Circuits Using PIN Photodiode as the Light Sensing Device
Author(s) -
Tu Cheng-Che,
Wu Sin-You,
Tai Ya-Hsiang
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14447
Subject(s) - photodiode , electronic circuit , pixel , photoresistor , thin film transistor , image sensor , computer science , electronic engineering , optoelectronics , materials science , electrical engineering , artificial intelligence , engineering , layer (electronics) , composite material
The large area TFT image sensors using PIN photodiode as the light sensing device attract attention owing to their application in optical fingerprint sensors under displays. Different structures of the pixel sensing circuits are compared in the aspect of output signal, settling time, photo current collection, as well as variation of TFT. Even though the active pixel sensing circuits (APS) are expected to provide better performance intuitively, the passive pixel sensing circuits (PPS) can surpass APS for practical purpose.