Premium
34.1: Invited Paper: The laser annealing for crystallization of amorphous silicon using blue light semiconductor laser
Author(s) -
Gotoh J.,
Yang Y.,
Kosugi J.,
Saito K.,
Kosuge T.,
Toriyama S.,
Sasaki N.,
Sawai T.,
Sugimoto S.
Publication year - 2021
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14440
Subject(s) - materials science , amorphous silicon , optoelectronics , silicon , laser , semiconductor , thin film transistor , crystallization , diode , annealing (glass) , laser diode , optics , crystalline silicon , nanotechnology , composite material , chemistry , physics , organic chemistry , layer (electronics)
Semiconductor blue laser diode was used for crystallization annealing of amorphous silicon of backplane of flat panel display. The grain size of result crystal can be controlled by laser beam intensity or beam scanning speed. The poly silicon produced by BLDA showed same characteristics as ELA in LTPS. Lateral crystal have been produced by BLDA, its field mobility is three times higher than poly silicon by ELA. A multiple head equipment is proposed, by which high performance TFT can be made with significantly lower cost comparing to conventional laser anneal technology.