P‐162: Improvement of Hole Injection in the OLED Devices through Fluorine Plasma | Zendy

Lee Eun-Hyung | Zendy; Jeong Song-Yi | Zendy; Kim Kwang-Jong | Zendy; Yoon Sung-Ji | Zendy; Hwang Soo-Won | Zendy; Kwon Sun-Kap | Zendy; Lee Heui-Dong | Zendy; Baek Ji-Ho | Zendy; Choi Hyun-Chul | Zendy; Kang In-Byeong | Zendy

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P‐162: Improvement of Hole Injection in the OLED Devices through Fluorine Plasma

Author(s) -

Lee Eun-Hyung,

Jeong Song-Yi,

Kim Kwang-Jong,

Yoon Sung-Ji,

Hwang Soo-Won,

Kwon Sun-Kap,

Lee Heui-Dong,

Baek Ji-Ho,

Choi Hyun-Chul,

Kang In-Byeong

Publication year - 2020

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.14306

Subject(s) - oled , plasma , optoelectronics , doping , materials science , reliability (semiconductor) , fluorine , nanotechnology , layer (electronics) , physics , power (physics) , quantum mechanics , metallurgy

We describe a highly efficient method for improving the hole injection of OLED devices through F plasma treatment. The opto‐electrical property of OLED devices with F treated ITO had nearly identical to conventional OLED devices with p‐doping process. Further, we demonstrate that the migration of F atoms and chemical reaction phenomenon near the interface of HTL improve hole injection and decrease built‐in potential. The OLED devices in this fashion achieve a high reliability and cost‐effectiveness in the various electronic gadgets.

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