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P‐162: Improvement of Hole Injection in the OLED Devices through Fluorine Plasma
Author(s) -
Lee Eun-Hyung,
Jeong Song-Yi,
Kim Kwang-Jong,
Yoon Sung-Ji,
Hwang Soo-Won,
Kwon Sun-Kap,
Lee Heui-Dong,
Baek Ji-Ho,
Choi Hyun-Chul,
Kang In-Byeong
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14306
Subject(s) - oled , plasma , optoelectronics , doping , materials science , reliability (semiconductor) , fluorine , nanotechnology , layer (electronics) , physics , power (physics) , quantum mechanics , metallurgy
We describe a highly efficient method for improving the hole injection of OLED devices through F plasma treatment. The opto‐electrical property of OLED devices with F treated ITO had nearly identical to conventional OLED devices with p‐doping process. Further, we demonstrate that the migration of F atoms and chemical reaction phenomenon near the interface of HTL improve hole injection and decrease built‐in potential. The OLED devices in this fashion achieve a high reliability and cost‐effectiveness in the various electronic gadgets.