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P‐110: Investigation of Bowing Effect of 4" Epitaxial Wafer and Reliability of GaN‐based Micro‐LED Devices
Author(s) -
Zhang Ke,
Liu Yibo,
Cha Ka wah,
Yeung Sze-Yan,
Sun Xiaowei,
Liu Zhaojun,
Kwok Hoi-Sing
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14244
Subject(s) - wafer , light emitting diode , reliability (semiconductor) , optoelectronics , materials science , bowing , epitaxy , fabrication , gallium nitride , characterization (materials science) , process (computing) , electronic engineering , computer science , nanotechnology , engineering , physics , power (physics) , alternative medicine , layer (electronics) , quantum mechanics , pathology , operating system , medicine , philosophy , theology
GaN‐based Micro‐LEDs have shown great potential in various filed, such as solid‐state lighting, display, sensor, visible light communication and multifunctional devices. The performance of Micro‐LEDs in various operating environment drew enormous attention recently. We investigate the fabrication process of Micro‐LED devices with 4" epitaxial wafer. The problems occurred during the process, especially bowing effect, were systematically introduced. Several solutions have been proposed and compared. In addition, the characterization and reliability test were measured to show sufficient quality of those devices.