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P‐99: The Size and Temperature Effect of Ideality Factor in GaN/InGaN Multiple Quantum Wells Micro Light Emitting Diodes (Micro‐LEDs)
Author(s) -
Liu Yibo,
Zhang Ke,
Chan Joe,
Yeung Sze-Yan,
Liu Zhaojun,
Kwok Hoi-Sing
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14235
Subject(s) - light emitting diode , optoelectronics , materials science , diode , full width at half maximum , wavelength , quantum well , optics , physics , laser
In this paper, we reported a GaN/InGaN multiple quantum wells (MQWs) micro light emitting diode (Micro‐LED) device with green light emission. For electronic performance, the Micro‐LED device exhibited a forward voltage of only 2.61 V at the current density of 10 A/cm 2 . For illumination performance, the emission light had 519 nm peak wavelength with a full width at half maximum (FWHM) of 22 nm. Furthermore, the diode ideality factor (n) was calculated and analyzed with different temperature categories (303 K to 573 K) and pixel sizes (30 μm to 200 μm), revealing a lower value of n with temperature growing and device scaling down.