Premium
P‐47: Influences of Mo Film Residual Stress on Cu/Mo Interface and Undercut Performance
Author(s) -
Li Guo,
Meng Chen,
Sheng Sun,
Yao Sun,
Huangzheng Liu,
Zhiwei Tan,
Juncheng Xiao,
Hang Zhou
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14178
Subject(s) - undercut , residual stress , materials science , bilayer , stress (linguistics) , layer (electronics) , composite material , metallurgy , structural engineering , engineering , chemistry , membrane , biochemistry , linguistics , philosophy
The bilayer structure of Cu/Mo wires applied in TV panels has been suffering from the undercut issue after patterning ever since its commercialization. Most of the efforts focused on applying more expensive barrier layer materials or the long‐time developing of etchant. In this paper, the influence of Mo residual stress on the undercut of Cu/Mo has been investigated. The results showed that by changing the Mo stress from tensile to compressive, the undercut has been improved to more than 50%, which is a promising solution for the issue.