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P‐45: Effect of Ar / O 2 Flow Ratio during Sputtering of InZnO Active Layer on Photocurrent and Responsivity Characteristics of Amorphous InZnO Thin Film Transistors
Author(s) -
Fan Changhui,
Xin Yu,
Qin Ludong,
Zhou Xiaoliang,
Zhang Shengdong
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14176
Subject(s) - photocurrent , responsivity , materials science , optoelectronics , thin film transistor , sputtering , amorphous solid , photoconductivity , active layer , layer (electronics) , transistor , thin film , photodetector , chemistry , voltage , nanotechnology , electrical engineering , organic chemistry , engineering
The photocurrent and responsivity characteristics of amorphous InZnO (a‐IZO) thin film transistors (TFTs) under different Ar:O 2 gas flow ratio when growing the IZO active layer by sputtering are investigated. As the Ar:O 2 gas flow ratio increases, the photocurrent and responsivity increase by nearly two orders of magnitude, under the same light power density at a wavelength of 400 nm to 475 nm light illumination.