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P‐32: Novel Gate Driving Circuit Integrated within Active Area Based on Amorphous Oxide TFT
Author(s) -
Wang MingXin,
Zhou Liufei,
Wang Zhijun,
Xu Shangjun,
Shu Yang,
Wang Huaipei,
Yuan Ling,
Bian Cunjian,
Fei Mi
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14164
Subject(s) - thin film transistor , amorphous solid , oxide thin film transistor , optoelectronics , materials science , gate oxide , oxide , logic gate , electrical engineering , transistor , nanotechnology , engineering , chemistry , voltage , metallurgy , crystallography , layer (electronics)
In this paper, we present a novel display panel framework and gate driving circuit which located within active area. The uniformity of gate driving circuit which evenly distributed in the whole pixel area is guaranteed by the adoption of BCE amorphous oxide TFT.