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P‐191: Late‐News‐Poster: Effects of Channel Doping on Flexible LTPS TFTs: Density of State, Generation Lifetime, and Image Sticking
Author(s) -
Kim Hyojung,
Park Jongwoo,
Song Jangkun,
Choi Byungdeog
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14143
Subject(s) - materials science , doping , thin film transistor , optoelectronics , capacitor , silicon , impurity , boron , channel (broadcasting) , electrical engineering , nanotechnology , layer (electronics) , voltage , chemistry , engineering , organic chemistry
In this paper, effects of boron channel doping on the low temperature poly‐silicon (LTPS) TFT were comprehensively investigated with respect to the density of state (DOS), generation lifetime and image sticking. The LTPS TFT and metal‐oxide‐semiconductor (MOS) capacitors fabricated in a way of varying boron doping, and flexible panels were characterized by I‐V and C‐V measurement. With increasing boron doping, the interface trap density (N it ) tends to increase. In fact, the DOS of p‐Si TFT reveals that the shallow level defects increase, whereas the deep level defects decrease with increasing dose. It is found that C‐t measurement is a useful tool for the generation lifetime (τ g ) associated with impurities of p‐Si. In turn, τ g is inversely proportional to image sticking index that reflects one of critical attributes for display image performance and quality.