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P‐19: A Study of Oxide TFT Vth Shift Behavior by Characterizing with Nano‐scale SIMS
Author(s) -
Park Jung Hwa,
Han Jae Bum,
Jeong Soo Im,
Park Young Gil,
Ahn Nari
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14142
Subject(s) - thin film transistor , materials science , annealing (glass) , oxide , fabrication , optoelectronics , oxide thin film transistor , nano , electron , nanotechnology , composite material , metallurgy , medicine , alternative medicine , pathology , physics , layer (electronics) , quantum mechanics
In the present work we developed advanced nano‐scale SIMS technology and investigated oxide TFTs Vth shift behavior. Not only vertical but also lateral resolutions were improved by modification of geometry factors and optimized the impact energy. By applying developed method, we found that a halogen element was directly modulated electrical property of oxide TFTs by generating free electrons. Both the patterning and post‐fabrication annealing processes had to be precisely controlled.