Premium
P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment
Author(s) -
Corsino Dianne,
Bermundo Juan Paolo,
Fujii Mami N.,
Ishikawa Yasuaki,
Ikenoue Hiroshi,
Uraoka Yukiharu
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14134
Subject(s) - thin film transistor , materials science , surface modification , optoelectronics , excimer laser , fabrication , annealing (glass) , transistor , laser , fluence , oxide , nanotechnology , optics , composite material , chemical engineering , electrical engineering , voltage , physics , alternative medicine , layer (electronics) , pathology , engineering , metallurgy , medicine
This work presents an all‐solution approach to oxide TFT fabrication through the photo‐functionalization of InZnO using photo‐assisted methods. We fabricated high‐performance all‐solution devices using UV and excimer laser treatment which are competitive with vacuum‐processed TFTs. This work is a big step towards large‐area manufacture of low‐cost electronics.