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P‐4: Enhanced Scalability and Reliability of High Mobility Elevated‐Metal Metal‐Oxide Thin‐Film Transistors with Bandgap Engineering
Author(s) -
Xia Zhihe,
Liu Xuchi,
Wang Yuqi,
Li Jiapeng,
Chen Rongsheng,
Lu Lei,
Kwok Hoi-Sing,
Wong Man
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14127
Subject(s) - materials science , band gap , optoelectronics , thin film transistor , indium tin oxide , oxide , transistor , reliability (semiconductor) , wide bandgap semiconductor , thin film , metal , indium , nanotechnology , electrical engineering , metallurgy , layer (electronics) , engineering , power (physics) , physics , quantum mechanics , voltage
The effects of bandgap engineering on the performance of elevated‐metal metal‐oxide thin‐film transistors were investigated. The incorporation of gallium in the indium‐tin‐zinc oxide thin‐film transistor channel was shown to lead to enhanced scalability and reliability. The improvement is attributed to the effective widening of the energy band, and the reduction of the population of defects and background carriers.