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P‐2: Hydrogenated SnO for p‐channel oxide Thin Film Transistor
Author(s) -
Lee Alex Wootae,
Matsuzaki Kosuke,
Nomura Kenji
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14125
Subject(s) - thin film transistor , annealing (glass) , materials science , monoxide , oxide , transistor , optoelectronics , hydrogen , tin oxide , oxide thin film transistor , thin film , channel (broadcasting) , nanotechnology , layer (electronics) , electrical engineering , chemistry , metallurgy , voltage , engineering , organic chemistry
Subgap defect termination for p‐type Tin monoxide (SnO) is developed with thermal annealing in hydrogen ambient for p‐channel oxide thin‐film transistor (TFT). High‐performance p‐channel oxide TFT with the TFT mobility of ~1.4‐1.8 cm 2 /Vs and large on‐to‐off current as large as 10 5 was demonstrated. Hydrogen‐containing annealing also maintains SnO phase stable up to 390 °C and effectively reduces the subgap defect, which offer the improvement in TFT characteristics.