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83‐4: Techniques to Achieve an AMOLED Display with Ultra‐narrow Border
Author(s) -
Liu Quan,
Jin Chunming,
Li Weilong,
Hu Siming,
Han Zhenzhen,
Gao Xiaoyu
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14108
Subject(s) - amoled , line width , luminance , materials science , line (geometry) , mobile phone , anode , computer science , optoelectronics , optics , telecommunications , physics , active matrix , nanotechnology , mathematics , electrode , thin film transistor , geometry , layer (electronics) , quantum mechanics
To achieve mobile phone with ultra‐narrow border, different design methods are proposed. By decreasing fanout line width and place clock signal lines under frit, an ultra‐narrow border full screen is obtained. Additionally, we verified that the line width of fanout with 2um has the feasibility of mass production and the luminance uniformity can be improved by 5%. What's more, the proportion of bright spots caused by anode residue is reduced to 0. At last, the best matching conditions are obtained to achieve ultra‐narrow border full screen mobile phone.